Category:
Power MOSFET
Dimensions:
3.1 x 1.7 x 0.8mm
Maximum Continuous Drain Current:
2.5 A
Width:
1.7mm
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1V
Package Type:
TSST
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.3V
Maximum Operating Temperature:
+150 °C
Channel Type:
N
Typical Input Capacitance @ Vds:
180 pF @ 10 V
Length:
3.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
20 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.25 W
Series:
TT8K2
Maximum Gate Source Voltage:
10 V
Height:
0.8mm
Typical Turn-On Delay Time:
7 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
140 mΩ
