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Nch 30V 4.5A Middle Power MOSFET

RF6E045AJTCR Nch 30V 4.5A Middle Power MOSFET
ROHM

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
8.1 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Series:
RF6E045AJ
Maximum Gate Source Voltage:
±12 V
Maximum Gate Threshold Voltage:
1.5V
Height:
0.82mm
Width:
1.8mm
Length:
2.1mm
Maximum Drain Source Resistance:
23.7 mΩ
Package Type:
SOT-363T
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
4.5 A
Minimum Gate Threshold Voltage:
0.5V
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
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This is Nch 30V 4.5A Middle Power MOSFET manufactured by ROHM. The manufacturer part number is RF6E045AJTCR. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 8.1 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1 w maximum power dissipation. The product rf6e045aj, is a highly preferred choice for users. It features a maximum gate source voltage of ±12 v. The product carries 1.5v of maximum gate threshold voltage. In addition, the height is 0.82mm. Furthermore, the product is 1.8mm wide. Its accurate length is 2.1mm. It provides up to 23.7 mω maximum drain source resistance. The package is a sort of sot-363t. It consists of 1 elements per chip. While 4.5 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.5v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)

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You will get a confirmation email regarding your order of Nch 30V 4.5A Middle Power MOSFET. You can also check on our website or by contacting our customer support team for further order details on Nch 30V 4.5A Middle Power MOSFET.
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