Category:
Power MOSFET
Dimensions:
3.1 x 1.7 x 0.8mm
Maximum Continuous Drain Current:
6 A
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
12 V
Maximum Gate Threshold Voltage:
1V
Package Type:
TSST
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
80 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
7800 pF @ -6 V
Length:
3.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
580 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.25 W
Series:
RT1A060AP
Maximum Gate Source Voltage:
0 → -8 V
Height:
0.8mm
Typical Turn-On Delay Time:
25 ns
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
19 mΩ
