Category:
Power MOSFET
Dimensions:
10.3 x 4.8 x 15.4mm
Maximum Continuous Drain Current:
11 A
Width:
4.8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220FM
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
32 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
670 pF @ 25 V
Length:
10.3mm
Pin Count:
3
Typical Turn-Off Delay Time:
90 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
53 W
Series:
R6511ENX
Maximum Gate Source Voltage:
±30 V
Height:
15.4mm
Typical Turn-On Delay Time:
25 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
400 mΩ
