Category:
Power MOSFET
Dimensions:
3 x 1.6 x 0.8mm
Maximum Continuous Drain Current:
2.4 (Tr2) A, 2.5 (Tr1) A
Width:
1.6mm
Maximum Drain Source Voltage:
20 (Tr1) V, 20 (Tr2) V
Maximum Gate Threshold Voltage:
1V
Package Type:
TSST
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.6 nC @ 4.5 V
Channel Type:
N, P
Typical Input Capacitance @ Vds:
260 pF @ 10 V
Length:
3mm
Pin Count:
8
Typical Turn-Off Delay Time:
28 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.25 W
Series:
TT8M3
Maximum Gate Source Voltage:
TR2) V, ±10 (Tri
Height:
0.8mm
Typical Turn-On Delay Time:
9 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
140 mΩ
