Taiwan Semi TSM2308CX RFG N-channel MOSFET, 3 A, 60 V, 3-Pin SOT-23

TSM2308CX-RFG Taiwan Semi TSM2308CX RFG N-channel MOSFET, 3 A, 60 V, 3-Pin SOT-23
Taiwan Semiconductor

Product Information

Maximum Continuous Drain Current:
3 A
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.99 nC @ 4.5 V
Channel Type:
N
Length:
3mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.25 W
Maximum Gate Source Voltage:
±20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
192 mΩ
RoHs Compliant
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This is Taiwan Semi N-channel MOSFET 3 A 60 V 3-Pin SOT-23 manufactured by Taiwan Semiconductor. The manufacturer part number is TSM2308CX RFG. While 3 a of maximum continuous drain current. Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3.99 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.25 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 192 mω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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