Infineon IPB50R199CPATMA1 N-channel MOSFET, 17 A, 550 V CoolMOS CP, 3-Pin D2PAK

IPB50R199CPATMA1 Infineon  N-channel MOSFET, 17 A, 550 V CoolMOS CP, 3-Pin D2PAK
IPB50R199CPATMA1
Infineon

Product Information

Maximum Continuous Drain Current:
17 A
Transistor Material:
Si
Width:
9.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
550 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
34 nC @ 10 V
Channel Type:
N
Length:
10.31mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
139 W
Series:
CoolMOS CP
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.572mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
199 mΩ
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This is N-channel MOSFET 17 A 550 V CoolMOS CP 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB50R199CPATMA1. While 17 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.45mm wide. The product offers single transistor configuration. It has a maximum of 550 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 34 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.31mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 139 w maximum power dissipation. The product coolmos cp, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.572mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 199 mω maximum drain source resistance.

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ESD Control Selection Guide V1(Technical Reference)
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IPB50R199CP, CoolMOS Power Transistor(Technical Reference)

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