Infineon BSS806NH6327XTSA1 N-channel MOSFET, 2.3 A, 20 V OptiMOS 2, 3-Pin SOT-23

BSS806NH6327XTSA1 Infineon  N-channel MOSFET, 2.3 A, 20 V OptiMOS 2, 3-Pin SOT-23
Infineon

Product Information

Maximum Continuous Drain Current:
2.3 A
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
0.75V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.7 nC @ 2.5 V
Channel Type:
N
Length:
2.9mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Series:
OptiMOS™ 2
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
82 mΩ
RoHs Compliant
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This is N-channel MOSFET 2.3 A 20 V OptiMOS 2 3-Pin SOT-23 manufactured by Infineon. The manufacturer part number is BSS806NH6327XTSA1. While 2.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.3mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.75v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.7 nc @ 2.5 v. The product is available in [Cannel Type] channel. Its accurate length is 2.9mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. The product optimos™ 2, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 82 mω maximum drain source resistance.

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BSS806N OptiMOS2 Small Signal Transistor Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of Infineon BSS806NH6327XTSA1 N-channel MOSFET, 2.3 A, 20 V OptiMOS 2, 3-Pin SOT-23. You can also check on our website or by contacting our customer support team for further order details on Infineon BSS806NH6327XTSA1 N-channel MOSFET, 2.3 A, 20 V OptiMOS 2, 3-Pin SOT-23.
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