Nexperia BSS138AKAR N-channel MOSFET, 200 mA, 60 V BSS138AKA, 3-Pin SOT-23

BSS138AKAR Nexperia  N-channel MOSFET, 200 mA, 60 V BSS138AKA, 3-Pin SOT-23
BSS138AKAR
Nexperia

Product Information

Maximum Continuous Drain Current:
200 mA
Width:
1.4mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
1.5V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.39 nC @ 4.5 V
Channel Type:
N
Length:
3mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.06 W
Series:
BSS138AKA
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
4.5 Ω
RoHs Compliant
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This is N-channel MOSFET 200 mA 60 V BSS138AKA 3-Pin SOT-23 manufactured by Nexperia. The manufacturer part number is BSS138AKAR. While 200 ma of maximum continuous drain current. Furthermore, the product is 1.4mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 1.5v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.8v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.39 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.06 w maximum power dissipation. The product bss138aka, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 4.5 ω maximum drain source resistance.

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BSS138AKA, 60V, Single N-channel Trench MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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