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This is N-channel MOSFET 200 mA 20 V 3-Pin EMT manufactured by ROHM. The manufacturer part number is RUE002N02TL. It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 150 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.7mm. Furthermore, the product is 0.8mm wide. Its accurate length is 1.6mm. It provides up to 4.8 ω maximum drain source resistance. The package is a sort of emt. It consists of 1 elements per chip. While 200 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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