ROHM RUE002N02TL N-channel MOSFET, 200 mA, 20 V, 3-Pin EMT

RUE002N02TL ROHM  N-channel MOSFET, 200 mA, 20 V, 3-Pin EMT
ROHM

Product Information

Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
0.7mm
Width:
0.8mm
Length:
1.6mm
Maximum Drain Source Resistance:
4.8 Ω
Package Type:
EMT
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
200 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 200 mA 20 V 3-Pin EMT manufactured by ROHM. The manufacturer part number is RUE002N02TL. It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 150 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.7mm. Furthermore, the product is 0.8mm wide. Its accurate length is 1.6mm. It provides up to 4.8 ω maximum drain source resistance. The package is a sort of emt. It consists of 1 elements per chip. While 200 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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RUE002N02 1.2V Drive N-ch MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of ROHM RUE002N02TL N-channel MOSFET, 200 mA, 20 V, 3-Pin EMT. You can also check on our website or by contacting our customer support team for further order details on ROHM RUE002N02TL N-channel MOSFET, 200 mA, 20 V, 3-Pin EMT.
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