ROHM BSM120D12P2C005 Dual N-channel SiC SiC Power Module, 120 A, 1200 V BSM, 4-Pin c

BSM120D12P2C005 ROHM  Dual N-channel SiC SiC Power Module, 120 A, 1200 V BSM, 4-Pin c
ROHM

Product Information

Maximum Drain Source Voltage:
1200 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
935 W
Series:
BSM
Maximum Gate Threshold Voltage:
4V
Height:
17mm
Width:
45.6mm
Length:
122mm
Minimum Gate Threshold Voltage:
1.6V
Package Type:
C
Number of Elements per Chip:
2
Minimum Operating Temperature:
-40 °C
Maximum Continuous Drain Current:
120 A
Transistor Material:
SiC
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
4
RoHs Compliant
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This is Dual N-channel SiC SiC Power Module 120 A 1200 V BSM 4-Pin c manufactured by ROHM. The manufacturer part number is BSM120D12P2C005. It has a maximum of 1200 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 935 w maximum power dissipation. The product bsm, is a highly preferred choice for users. The product carries 4v of maximum gate threshold voltage. In addition, the height is 17mm. Furthermore, the product is 45.6mm wide. Its accurate length is 122mm. Whereas its minimum gate threshold voltage includes 1.6v. The package is a sort of c. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -40 °c. While 120 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 4 pins.

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BSM120D12P2C005, SiC Power Module(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of ROHM BSM120D12P2C005 Dual N-channel SiC SiC Power Module, 120 A, 1200 V BSM, 4-Pin c. You can also check on our website or by contacting our customer support team for further order details on ROHM BSM120D12P2C005 Dual N-channel SiC SiC Power Module, 120 A, 1200 V BSM, 4-Pin c.
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