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This is Dual N-channel SiC SiC Power Module 120 A 1200 V BSM 4-Pin c manufactured by ROHM. The manufacturer part number is BSM120D12P2C005. It has a maximum of 1200 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 935 w maximum power dissipation. The product bsm, is a highly preferred choice for users. The product carries 4v of maximum gate threshold voltage. In addition, the height is 17mm. Furthermore, the product is 45.6mm wide. Its accurate length is 122mm. Whereas its minimum gate threshold voltage includes 1.6v. The package is a sort of c. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -40 °c. While 120 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 4 pins.
For more information please check the datasheets.
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