Category:
Power MOSFET
Dimensions:
6.6 x 6.2 x 2.4mm
Maximum Continuous Drain Current:
13 A
Transistor Material:
Si
Width:
6.2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
130 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
15.3 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
460 pF@ 25 V
Length:
6.6mm
Pin Count:
3
Typical Turn-Off Delay Time:
32 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
50 W
Series:
STripFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.4mm
Typical Turn-On Delay Time:
16 ns
Minimum Operating Temperature:
-55 °C
