Wolfspeed C3M0120100J N-channel SiC MOSFET, 22 A, 1000 V C3M, 7+Tab-Pin D2PAK

C3M0120100J Wolfspeed  N-channel SiC MOSFET, 22 A, 1000 V C3M, 7+Tab-Pin D2PAK
Wolfspeed

Product Information

Maximum Continuous Drain Current:
22 A
Transistor Material:
SiC
Width:
9.12mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
1000 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-263-7
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
21.5 @ 4/+15 V
Channel Type:
N
Length:
10.23mm
Pin Count:
7
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
83 W
Series:
C3M
Maximum Gate Source Voltage:
+15 V, +9 V
Height:
4.32mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
4.8V
Maximum Drain Source Resistance:
170 mΩ
RoHs Compliant
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This is N-channel SiC MOSFET 22 A 1000 V C3M 7+Tab-Pin D2PAK manufactured by Wolfspeed. The manufacturer part number is C3M0120100J. While 22 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. Furthermore, the product is 9.12mm wide. The product offers single transistor configuration. It has a maximum of 1000 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-263-7. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.8v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 21.5 @ 4/+15 v. The product is available in [Cannel Type] channel. Its accurate length is 10.23mm. It contains 7 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 83 w maximum power dissipation. The product c3m, is a highly preferred choice for users. It features a maximum gate source voltage of +15 v, +9 v. In addition, the height is 4.32mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 4.8v . It provides up to 170 mω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of Wolfspeed C3M0120100J N-channel SiC MOSFET, 22 A, 1000 V C3M, 7+Tab-Pin D2PAK. You can also check on our website or by contacting our customer support team for further order details on Wolfspeed C3M0120100J N-channel SiC MOSFET, 22 A, 1000 V C3M, 7+Tab-Pin D2PAK.
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