Maximum Continuous Drain Current:
35 A
Transistor Material:
SiC
Width:
5.21mm
Maximum Drain Source Voltage:
1000 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-247-4
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
35 nC @ 15 V, 35 nC @ 4 V
Channel Type:
N
Length:
16.13mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
113.5 W
Series:
C3M
Maximum Gate Source Voltage:
-8 V, +19 V
Height:
23.6mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
4.8V
Maximum Drain Source Resistance:
90 mΩ
This is N-channel SiC MOSFET 35 A 1000 V C3M 4-Pin TO-247 manufactured by Wolfspeed. The manufacturer part number is C3M0065100K. While 35 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. Furthermore, the product is 5.21mm wide. It has a maximum of 1000 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-247-4. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.8v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 35 nc @ 15 v, 35 nc @ 4 v. The product is available in [Cannel Type] channel. Its accurate length is 16.13mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 113.5 w maximum power dissipation. The product c3m, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +19 v. In addition, the height is 23.6mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 4.8v . It provides up to 90 mω maximum drain source resistance.
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