Category:
Power MOSFET
Dimensions:
2.2 x 1.35 x 1mm
Maximum Continuous Drain Current:
1.5 A
Transistor Material:
Si
Width:
1.35mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.5V
Package Type:
SC-88
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.65 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
37 pF @ 25 V
Length:
2.2mm
Pin Count:
6
Typical Turn-Off Delay Time:
14 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
410 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1mm
Typical Turn-On Delay Time:
6.5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
748 mΩ
