Toshiba TPN2R304PL N-channel MOSFET, 100 A, 40 V, 8-Pin TSON

TPN2R304PL Toshiba  N-channel MOSFET, 100 A, 40 V, 8-Pin TSON
Toshiba

Product Information

Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
41 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
104 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2.4V
Channel Type:
N
Width:
3.1mm
Length:
3.1mm
Maximum Drain Source Resistance:
4 mΩ
Package Type:
TSON
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
100 A
Minimum Gate Threshold Voltage:
1.4V
Forward Diode Voltage:
1.2V
Height:
0.85mm
Maximum Operating Temperature:
+175 °C
Pin Count:
8
Transistor Configuration:
Single
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This is N-channel MOSFET 100 A 40 V 8-Pin TSON manufactured by Toshiba. The manufacturer part number is TPN2R304PL. It has a maximum of 40 v drain source voltage. With a typical gate charge at Vgs includes 41 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 104 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 2.4v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 3.1mm wide. Its accurate length is 3.1mm. It provides up to 4 mω maximum drain source resistance. The package is a sort of tson. It consists of 1 elements per chip. While 100 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1.4v. Its forward diode voltage is 1.2v . In addition, the height is 0.85mm. It has a maximum operating temperature of +175 °c. It contains 8 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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