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This is N-channel MOSFET 21 A 60 V U-MOSVIII-H 8-Pin TSON manufactured by Toshiba. The manufacturer part number is TPN22006NH,LQ(S. While 21 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.1mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of tson. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 12 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.1mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 18 w maximum power dissipation. The product u-mosviii-h, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.85mm. Its forward diode voltage is 1.2v . It provides up to 64 mω maximum drain source resistance.
For more information please check the datasheets.
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