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This is N-channel MOSFET 13.7 A 650 V DTMOSIV 3-Pin D2PAK manufactured by Toshiba. The manufacturer part number is TK14G65W,RQ(S. While 13.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 8.8mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 35 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.35mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 130 w maximum power dissipation. The product dtmosiv, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 4.46mm. Its forward diode voltage is 1.7v . It provides up to 250 mω maximum drain source resistance.
For more information please check the datasheets.
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