Toshiba SSM3K361R N-channel MOSFET, 3.5 A, 100 V, 3-Pin SOT-23F

SSM3K361R Toshiba  N-channel MOSFET, 3.5 A, 100 V, 3-Pin SOT-23F
Toshiba

Product Information

Maximum Continuous Drain Current:
3.5 A
Width:
1.8mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
3.2 nC @ 4.5 V
Channel Type:
N
Length:
2.9mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.4 W
Maximum Gate Source Voltage:
±20 V
Height:
0.7mm
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
92 mΩ
RoHs Compliant
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This is N-channel MOSFET 3.5 A 100 V 3-Pin SOT-23F manufactured by Toshiba. The manufacturer part number is SSM3K361R. While 3.5 a of maximum continuous drain current. Furthermore, the product is 1.8mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 3.2 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 2.9mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.4 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 0.7mm. Its forward diode voltage is 1.5v . It provides up to 92 mω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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