Infineon SPW32N50C3FKSA1 N-channel MOSFET, 32 A, 560 V CoolMOS C3, 3-Pin TO-247

SPW32N50C3FKSA1 Infineon  N-channel MOSFET, 32 A, 560 V CoolMOS C3, 3-Pin TO-247
SPW32N50C3FKSA1
Infineon

Product Information

Maximum Continuous Drain Current:
32 A
Width:
5.21mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
560 V
Maximum Gate Threshold Voltage:
3.9V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
170 nC @ 10 V
Channel Type:
N
Length:
16.13mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
284 W
Series:
CoolMOS™ C3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
21.1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
110 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 32 A 560 V CoolMOS C3 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is SPW32N50C3FKSA1. While 32 a of maximum continuous drain current. Furthermore, the product is 5.21mm wide. The product offers single transistor configuration. It has a maximum of 560 v drain source voltage. The product carries 3.9v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 170 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 16.13mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 284 w maximum power dissipation. The product coolmos™ c3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 21.1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 110 mω maximum drain source resistance.

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SPW32N50C3, CoolMOS Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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