Category:
Power MOSFET
Dimensions:
6.73 x 2.39 x 6.22mm
Maximum Continuous Drain Current:
84 A
Transistor Material:
Si
Width:
2.39mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
12 V
Maximum Drain Source Resistance:
30 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
41 nC @ 5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2490 pF @ 6 V
Length:
6.73mm
Pin Count:
3
Forward Transconductance:
31S
Typical Turn-Off Delay Time:
21 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
88 W
Series:
HEXFET
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
6.22mm
Typical Turn-On Delay Time:
11 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
