Infineon IRLML2502TRPBF, N-channel MOSFET, 4.2 A, 20 V IRLML2502, 3-Pin SOT-23

IRLML2502TRPBF Infineon , N-channel MOSFET, 4.2 A, 20 V IRLML2502, 3-Pin SOT-23
Infineon

Product Information

Maximum Continuous Drain Current:
4.2 A
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.2V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8 nC @ 5 V
Channel Type:
N
Length:
3.04mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.25 W
Series:
IRLML2502
Maximum Gate Source Voltage:
±12 V
Height:
1.02mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
80 mΩ
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The Infineon IRLML2502TRPBF is a high-grade N-channel MOSFET designed to offer efficient power management in a compact form factor. This MOSFET is a part of Infineon's extensive range of semiconductor products, known for their reliability and cutting-edge technology. Its combination of fast switching, low on-resistance, and efficient thermal management makes it a valuable component in modern electronic design.

  • Compact and Robust Design

Housed in a 3-Pin SOT-23 package, the IRLML2502TRPBF is notable for its small size, making it an ideal choice for space-constrained applications. Despite its diminutive stature, it offers robust performance with a drain-source voltage (V_DS) of 20 V and a continuous drain current (I_D) of 4.2 A.

The Infineon IRLML2502TRPBF, N-channel MOSFET, 4.2 A, 20 V IRLML2502, 3-Pin SOT-23: Key Attributes and Advantages

  • The IRLML2502TRPBF is designed for high efficiency, which is crucial in reducing power loss and improving overall system performance.
  • This MOSFET features fast switching speeds, a critical attribute for high-frequency applications.
  • Fast switching helps in reducing transition losses and improves the performance of power regulation circuits.
  • Despite its small size, the IRLML2502TRPBF manages heat dissipation effectively.
  • The low on-resistance (R_DS (on)) of this MOSFET minimises conduction losses.

Versatile in Various Electronic Circuits

The IRLML2502TRPBF is widely used in a variety of electronic applications. Its high efficiency and fast switching capabilities make it suitable for:

  • Power management modules in portable devices.
  • DC-DC converters, where efficient power conversion is crucial.
  • Load switch applications benefit from their low on-resistance.
  • Motor control circuits in small electronic devices.
  • Ideal for Compact Electronics
  • Given its small size, the IRLML2502TRPBF is particularly well-suited for compact electronic devices where space is at a premium, such as smartphones, tablets, and other portable gadgets.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of Infineon IRLML2502TRPBF, N-channel MOSFET, 4.2 A, 20 V IRLML2502, 3-Pin SOT-23. You can also check on our website or by contacting our customer support team for further order details on Infineon IRLML2502TRPBF, N-channel MOSFET, 4.2 A, 20 V IRLML2502, 3-Pin SOT-23.
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Yes. We ship IRLML2502TRPBF Internationally to many countries around the world.