Infineon IRL2910STRLPBF N-channel MOSFET, 55 A, 100 V HEXFET, 3-Pin D2PAK

Infineon

Product Information

Automotive Standard:
No
Maximum Power Dissipation Pd:
200W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
100V
Channel Mode:
Enhancement
Series:
HEXFET
Forward Voltage Vf:
1.3V
Height:
4.83mm
Typical Gate Charge Qg @ Vgs:
140nC
Length:
10.67mm
Package Type:
TO-263
Minimum Operating Temperature:
-55?C
Maximum Drain Source Resistance Rds:
40m?
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
55A
Channel Type:
Type N
Maximum Operating Temperature:
175?C
Pin Count:
3
Mount Type:
Surface
RoHs Compliant
403 - In Stock

Ships in 5-7 business days

Each (In a Pack of 5)

Quantity
Unit Price (ex VAT)
Price
5
£ 2.47
£ 12.35
25
£ 2.19
£ 54.75
50
£ 2.07
£ 103.50
Mfr Part No:
IRL2910STRLPBF
Seller:
Infineon
Origin:
Warranty:
Manufacturer
Data Code:
ET16793696
Order Today!
From: United Kingdom
Est Ship Date: 08 Jun, 2026
Est Fastest Delivery: 10 Jun, 2026

This is N-channel MOSFET 55 A 100 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRL2910STRLPBF. The product complies with automotive standard - no. mosfet is a versatile product designed to provide user-defined applications. The product carries enhancement channel mode. The product hexfet, is a highly preferred choice for users. In addition, the height is 4.83mm. Its accurate length is 10.67mm. The package is a sort of to-263. Whereas, the minimum operating temperature of the product is -55?c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of 175?c. It contains 3 pins. It has a surface type mount .

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IRL2910S/LPbF, HEXFET Power MOSFET(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

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