This is N-channel MOSFET 180 A 40 V HEXFET 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IRFR7440TRPBF. While 180 a of maximum continuous drain current. Furthermore, the product is 2.39mm wide. It has a maximum of 40 v drain source voltage. The product carries 3.9v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 89 nc @ 20 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 140 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 6.22mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 2.4 mω maximum drain source resistance.
IRFR7440PbF, IRFU7440PbF, HEXFET Power MOSFET 40V(Technical Reference)
ESD Control Selection Guide V1(Technical Reference)
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This is N-channel MOSFET 180 A 40 V HEXFET 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IRFR7440TRPBF. While 180 a of maximum continuous drain current. Furthermore, the product is 2.39mm wide. It has a maximum of 40 v drain source voltage. The product carries 3.9v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 89 nc @ 20 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 140 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 6.22mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 2.4 mω maximum drain source resistance.
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