Infineon IRFB4310PBF N-channel MOSFET, 130 A, 100 V HEXFET, 3-Pin TO-220AB

IRFB4310PBF Infineon  N-channel MOSFET, 130 A, 100 V HEXFET, 3-Pin TO-220AB
IRFB4310PBF
Infineon

Product Information

Maximum Continuous Drain Current:
130 A
Transistor Material:
Si
Width:
4.82mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
170 nC @ 10 V
Channel Type:
N
Length:
10.66mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
300 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.02mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
7 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 130 A 100 V HEXFET 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is IRFB4310PBF. While 130 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.82mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 170 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.66mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 300 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 9.02mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 7 mω maximum drain source resistance.

pdf icon
Datasheet(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

Reviews

  • Be the first to review.


FAQs

Yes. You can also search IRFB4310PBF on website for other similar products.
We accept all major payment methods for all products including ET16793590. Please check your shopping cart at the time of order.
You can order Infineon brand products with IRFB4310PBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRFB4310PBF N-channel MOSFET, 130 A, 100 V HEXFET, 3-Pin TO-220AB. You can also check on our website or by contacting our customer support team for further order details on Infineon IRFB4310PBF N-channel MOSFET, 130 A, 100 V HEXFET, 3-Pin TO-220AB.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16793590 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16793590.
Yes. We ship IRFB4310PBF Internationally to many countries around the world.