Infineon IPP60R125CPXKSA1 N-channel MOSFET, 25 A, 650 V CoolMOS CP, 3-Pin TO-220

IPP60R125CPXKSA1 Infineon  N-channel MOSFET, 25 A, 650 V CoolMOS CP, 3-Pin TO-220
Infineon

Product Information

Maximum Continuous Drain Current:
25 A
Transistor Material:
Si
Width:
4.57mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
53 nC @ 10 V
Channel Type:
N
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
208 W
Series:
CoolMOS CP
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15.95mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
120 mΩ
RoHs Compliant
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This is N-channel MOSFET 25 A 650 V CoolMOS CP 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPP60R125CPXKSA1. While 25 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.57mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 53 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 208 w maximum power dissipation. The product coolmos cp, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 15.95mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 120 mω maximum drain source resistance.

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IPP60R125CP CoolMOS Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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