Infineon IPN50R1K4CEATMA1 N-channel MOSFET, 4.8 A, 550 V CoolMOS CE, 3+Tab-Pin SOT-223

IPN50R1K4CEATMA1 Infineon  N-channel MOSFET, 4.8 A, 550 V CoolMOS CE, 3+Tab-Pin SOT-223
IPN50R1K4CEATMA1
Infineon

Product Information

Maximum Continuous Drain Current:
4.8 A
Width:
3.7mm
Maximum Drain Source Voltage:
550 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.2 nC @ 10 V
Channel Type:
N
Length:
6.7mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
5 W
Series:
CoolMOS™ CE
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
1.7mm
Minimum Operating Temperature:
-40 °C
Forward Diode Voltage:
0.83V
Maximum Drain Source Resistance:
1.4 Ω
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 4.8 A 550 V CoolMOS CE 3+Tab-Pin SOT-223 manufactured by Infineon. The manufacturer part number is IPN50R1K4CEATMA1. While 4.8 a of maximum continuous drain current. Furthermore, the product is 3.7mm wide. It has a maximum of 550 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 8.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.7mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 5 w maximum power dissipation. The product coolmos™ ce, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 1.7mm. Whereas, the minimum operating temperature of the product is -40 °c. Its forward diode voltage is 0.83v . It provides up to 1.4 ω maximum drain source resistance.

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IPN50R1K4CE, MOSFET 500V CoolMOS CE Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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