Category:
Power MOSFET
Dimensions:
10 x 4.4 x 9.25mm
Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
4.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
5.2 mΩ
Package Type:
I2PAK (TO-262)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
116 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
7900 pF @ -25 V
Length:
10mm
Pin Count:
3
Typical Turn-Off Delay Time:
73 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Series:
OptiMOS P
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.25mm
Typical Turn-On Delay Time:
42 ns
Minimum Operating Temperature:
-55 °C
