Infineon IPD90N03S4L02ATMA1 N-channel MOSFET, 90 A, 30 V OptiMOS T2, 3-Pin DPAK

IPD90N03S4L02ATMA1 Infineon  N-channel MOSFET, 90 A, 30 V OptiMOS T2, 3-Pin DPAK
IPD90N03S4L02ATMA1
Infineon

Product Information

Maximum Continuous Drain Current:
90 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
110 nC @ 10 V
Channel Type:
N
Length:
6.5mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
136 W
Series:
OptiMOS™ -T2
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
2.3mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2.6 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 90 A 30 V OptiMOS T2 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD90N03S4L02ATMA1. While 90 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 110 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.5mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 136 w maximum power dissipation. The product optimos™ -t2, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +16 v. In addition, the height is 2.3mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 2.6 mω maximum drain source resistance.

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ESD Control Selection Guide V1(Technical Reference)
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IPD90N03S4L02 OptiMOS T2 Power Transistor Datasheet(Technical Reference)

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