Infineon IPB60R160P6ATMA1 N-channel MOSFET, 23.8 A, 650 V CoolMOS P6, 3-Pin D2PAK

IPB60R160P6ATMA1 Infineon  N-channel MOSFET, 23.8 A, 650 V CoolMOS P6, 3-Pin D2PAK
IPB60R160P6ATMA1
Infineon

Product Information

Maximum Continuous Drain Current:
23.8 A
Width:
4.57mm
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
44 nC @ 10 V
Channel Type:
N
Length:
10.31mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
176 W
Series:
CoolMOS™ P6
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
9.45mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.9V
Maximum Drain Source Resistance:
160 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 23.8 A 650 V CoolMOS P6 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB60R160P6ATMA1. While 23.8 a of maximum continuous drain current. Furthermore, the product is 4.57mm wide. It has a maximum of 650 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 44 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.31mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 176 w maximum power dissipation. The product coolmos™ p6, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 9.45mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 0.9v . It provides up to 160 mω maximum drain source resistance.

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IPx60R160P6, MOSFET 600V CoolMOS P6 Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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