Category:
Power MOSFET
Dimensions:
10.31 x 9.45 x 4.57mm
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
9.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
88 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
6100 pF @ 40 V
Length:
10.31mm
Pin Count:
3
Forward Transconductance:
149S
Typical Turn-Off Delay Time:
45 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
214 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.57mm
Typical Turn-On Delay Time:
23 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
6 mΩ
