Infineon BSC120N03LSGATMA1 N-channel MOSFET Transistor, 39 A, 30 V OptiMOS 3, 8-Pin TDSON

BSC120N03LSGATMA1 Infineon  N-channel MOSFET Transistor, 39 A, 30 V OptiMOS 3, 8-Pin TDSON
BSC120N03LSGATMA1
Infineon

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
11 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.2V
Height:
1.1mm
Width:
5.35mm
Length:
6.35mm
Maximum Drain Source Resistance:
16.5 mΩ
Package Type:
TDSON
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
39 A
Minimum Gate Threshold Voltage:
1V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
RoHs Compliant
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This is N-channel MOSFET Transistor 39 A 30 V OptiMOS 3 8-Pin TDSON manufactured by Infineon. The manufacturer part number is BSC120N03LSGATMA1. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 11 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.5 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.2v of maximum gate threshold voltage. In addition, the height is 1.1mm. Furthermore, the product is 5.35mm wide. Its accurate length is 6.35mm. It provides up to 16.5 mω maximum drain source resistance. The package is a sort of tdson. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 39 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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