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Infineon BSC080N03MSGATMA1 N-channel MOSFET, 53 A, 30 V OptiMOS 3, 8-Pin TDSON

BSC080N03MSGATMA1 Infineon N-channel MOSFET, 53 A, 30 V OptiMOS 3, 8-Pin TDSON
BSC080N03MSGATMA1
Infineon

Product Information

Maximum Continuous Drain Current:
53 A
Transistor Material:
Si
Width:
6.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2V
Package Type:
TDSON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
21 nC @ 10 V
Channel Type:
N
Length:
5.35mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
35 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
10.2 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 53 A 30 V OptiMOS 3 8-Pin TDSON manufactured by Infineon. The manufacturer part number is BSC080N03MSGATMA1. While 53 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.1mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of tdson. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 21 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5.35mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 35 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 10.2 mω maximum drain source resistance.

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MOSFET N-ch 30V 53A OptiMOS3 5V TDSON8(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

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FAQs

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We accept all major payment methods for all products including ET16792477. Please check your shopping cart at the time of order.
You can order Infineon brand products with BSC080N03MSGATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon BSC080N03MSGATMA1 N-channel MOSFET, 53 A, 30 V OptiMOS 3, 8-Pin TDSON. You can also check on our website or by contacting our customer support team for further order details on Infineon BSC080N03MSGATMA1 N-channel MOSFET, 53 A, 30 V OptiMOS 3, 8-Pin TDSON.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16792477 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16792477.
Yes. We ship BSC080N03MSGATMA1 Internationally to many countries around the world.
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