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This is Dual N/P-channel MOSFET 1.3 A 1.5 A 12 V 20 V US6M11 6-Pin TUMT manufactured by ROHM. The manufacturer part number is US6M11TR. While 1.3 a, 1.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers dual base transistor configuration. It has a maximum of 12 v, 20 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of tumt. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.8 nc @ 4.5 v, 2.4 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 2mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1 w maximum power dissipation. The product us6m11, is a highly preferred choice for users. It features a maximum gate source voltage of -10 v, +10 v. In addition, the height is 0.77mm. Its forward diode voltage is 1.2v . It provides up to 1.06 ω, 600 mω maximum drain source resistance.
For more information please check the datasheets.
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