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This is N-channel SiC MOSFET 29 A 650 V SCT2120AF 3-Pin TO-220AB manufactured by ROHM. The manufacturer part number is SCT2120AFC. While 29 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. Furthermore, the product is 8.63mm wide. It has a maximum of 650 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.6v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 61 nc @ 18 v. The product is available in [Cannel Type] channel. Its accurate length is 10.26mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 165 w maximum power dissipation. The product sct2120af, is a highly preferred choice for users. It features a maximum gate source voltage of -6 v, +22 v. In addition, the height is 4.45mm. Its forward diode voltage is 4.3v . It provides up to 156 mω maximum drain source resistance.
For more information please check the datasheets.
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