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This is N-channel MOSFET 1 A 20 V RV2C010UN 3-Pin DFN manufactured by ROHM. The manufacturer part number is RV2C010UNT2L. It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 400 mw maximum power dissipation. The product rv2c010un, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.35mm. Furthermore, the product is 1.05mm wide. Its accurate length is 0.65mm. It provides up to 1.05 ω maximum drain source resistance. The package is a sort of dfn. It consists of 1 elements per chip. While 1 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.3v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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