Maximum Continuous Drain Current:
4 A
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
TSST
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10.5 nC @ 5 V, 20 nC @ 10 V
Channel Type:
P
Length:
3.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.25 W
Series:
RT1E040RP
Maximum Gate Source Voltage:
±20 V
Height:
0.8mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
66 mΩ
This is P-channel MOSFET 4 A 30 V RT1E040RP 8-Pin TSST manufactured by ROHM. The manufacturer part number is RT1E040RPTR. While 4 a of maximum continuous drain current. Furthermore, the product is 1.7mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of tsst. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 10.5 nc @ 5 v, 20 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.1mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.25 w maximum power dissipation. The product rt1e040rp, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 0.8mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 66 mω maximum drain source resistance.
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