Maximum Continuous Drain Current:
4 A
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
TSST
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10.5 nC @ 5 V, 20 nC @ 10 V
Channel Type:
P
Length:
3.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.25 W
Series:
RT1E040RP
Maximum Gate Source Voltage:
±20 V
Height:
0.8mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
66 mΩ
