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This is N-channel MOSFET 18 A 30 V RQ3E080GN 8-Pin HSMT manufactured by ROHM. The manufacturer part number is RQ3E080GNTB. While 18 a of maximum continuous drain current. Furthermore, the product is 3.1mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of hsmt. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 5.8 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.3mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 14 w maximum power dissipation. The product rq3e080gn, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.85mm. Its forward diode voltage is 1.2v . It provides up to 31.2 mω maximum drain source resistance.
For more information please check the datasheets.
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