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This is N-channel MOSFET 10 A 800 V 3-Pin TO-220FM manufactured by ROHM. The manufacturer part number is R8010ANX. It has a maximum of 800 v drain source voltage. With a typical gate charge at Vgs includes 62 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 40 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. The product carries 5v of maximum gate threshold voltage. In addition, the height is 15.4mm. Furthermore, the product is 4.8mm wide. Its accurate length is 10.3mm. It provides up to 950 mω maximum drain source resistance. The package is a sort of to-220fm. It consists of 1 elements per chip. While 10 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 3v. Its forward diode voltage is 1.5v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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