Category:
Power MOSFET
Dimensions:
16.13 x 5.21 x 21.34mm
Maximum Continuous Drain Current:
30 A
Width:
5.21mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
90 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2100 pF @ 25 V
Length:
16.13mm
Pin Count:
3
Typical Turn-Off Delay Time:
200 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
305 W
Series:
R6530ENZ1
Maximum Gate Source Voltage:
±30 V
Height:
21.34mm
Typical Turn-On Delay Time:
30 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
255 mΩ
