ROHM R5009FNX N-channel MOSFET, 9 A, 500 V, 3-Pin TO-220FM

R5009FNX ROHM  N-channel MOSFET, 9 A, 500 V, 3-Pin TO-220FM
R5009FNX
R5009FNX
ET16782126
ET16782126
MOSFETs
ROHM

Product Information

Category:
Driver MOSFET
Dimensions:
10.3 x 4.8 x 15.4mm
Maximum Continuous Drain Current:
9 A
Width:
4.8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220FM
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
630 pF @ 25 V
Length:
10.3mm
Pin Count:
3
Forward Transconductance:
5.7S
Typical Turn-Off Delay Time:
50 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
51 W
Maximum Gate Source Voltage:
±30 V
Height:
15.4mm
Typical Turn-On Delay Time:
24 ns
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
1.37 Ω
RoHs Compliant
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This is N-channel MOSFET 9 A 500 V 3-Pin TO-220FM manufactured by ROHM. The manufacturer part number is R5009FNX. It is of driver mosfet category . The given dimensions of the product include 10.3 x 4.8 x 15.4mm. While 9 a of maximum continuous drain current. Furthermore, the product is 4.8mm wide. The product offers single transistor configuration. It has a maximum of 500 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220fm. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 18 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 630 pf @ 25 v . Its accurate length is 10.3mm. It contains 3 pins. The forward transconductance is 5.7s . Whereas, its typical turn-off delay time is about 50 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 51 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 15.4mm. In addition, it has a typical 24 ns turn-on delay time . Its forward diode voltage is 1.5v . It provides up to 1.37 ω maximum drain source resistance.

pdf icon
ESD Control Selection Guide V1(Technical Reference)
pdf icon
1720356_Specification Data Sheet(Technical Reference)

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FAQs

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You can order ROHM brand products with R5009FNX directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ROHM R5009FNX N-channel MOSFET, 9 A, 500 V, 3-Pin TO-220FM. You can also check on our website or by contacting our customer support team for further order details on ROHM R5009FNX N-channel MOSFET, 9 A, 500 V, 3-Pin TO-220FM.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16782126 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ROHM" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16782126.
Yes. We ship R5009FNX Internationally to many countries around the world.