Category:
Driver MOSFET
Dimensions:
10.3 x 4.8 x 15.4mm
Maximum Continuous Drain Current:
9 A
Width:
4.8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220FM
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
630 pF @ 25 V
Length:
10.3mm
Pin Count:
3
Forward Transconductance:
5.7S
Typical Turn-Off Delay Time:
50 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
51 W
Maximum Gate Source Voltage:
±30 V
Height:
15.4mm
Typical Turn-On Delay Time:
24 ns
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
1.37 Ω