Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
15.5 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.6 W
Series:
QH8MA4
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2.5 (N Channel) V, 2.5 (P Channel) V
Height:
0.8mm
Width:
2.5mm
Length:
3.1mm
Maximum Drain Source Resistance:
23.7 mΩ
Package Type:
TSMT
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
8 (P Channel) A, 9 (N Channel) A
Minimum Gate Threshold Voltage:
1 (N Channel) V, 1 (P Channel) V
Forward Diode Voltage:
1.2V
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8