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This is Taiwan Semi N-channel MOSFET 6 A 600 V 3 + Tab-Pin DPAK manufactured by Taiwan Semiconductor. The manufacturer part number is TSM6N60CP ROG. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 20.7 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 89 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 2.3mm. Furthermore, the product is 5.8mm wide. Its accurate length is 6.5mm. It provides up to 1.25 ω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 6 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. Its forward diode voltage is 1.5v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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