Taiwan Semi TSM2309CX RFG P-channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23

TSM2309CX-RFG Taiwan Semi TSM2309CX RFG P-channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23
Taiwan Semiconductor

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
8.2 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.56 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
0.95mm
Width:
1.6mm
Length:
2.9mm
Maximum Drain Source Resistance:
240 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
3.1 A
Minimum Gate Threshold Voltage:
1.2V
Forward Diode Voltage:
1V
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Taiwan Semi P-channel MOSFET 3.1 A 60 V 3-Pin SOT-23 manufactured by Taiwan Semiconductor. The manufacturer part number is TSM2309CX RFG. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 8.2 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.56 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 0.95mm. Furthermore, the product is 1.6mm wide. Its accurate length is 2.9mm. It provides up to 240 mω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. While 3.1 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1.2v. Its forward diode voltage is 1v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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