Category:
Power MOSFET
Dimensions:
6.57 x 6.11 x 2.29mm
Maximum Continuous Drain Current:
70 A
Width:
6.11mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.5V
Maximum Drain Source Resistance:
15 mΩ
Package Type:
TO-252
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18 nC @ 4.5 V, 37 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2118 pF @ 30 V
Length:
6.57mm
Pin Count:
3 + Tab
Forward Transconductance:
40S
Typical Turn-Off Delay Time:
25.6 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Maximum Gate Source Voltage:
±20 V
Height:
2.29mm
Typical Turn-On Delay Time:
6.4 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
