Diodes Inc ZXMN2A01E6TA N-channel MOSFET, 3.1 A, 20 V, 6-Pin SOT-23

ZXMN2A01E6TA Diodes Inc  N-channel MOSFET, 3.1 A, 20 V, 6-Pin SOT-23
DiodesZetex

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
3 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.7 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.3mm
Width:
1.75mm
Length:
3mm
Minimum Gate Threshold Voltage:
0.7V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3.1 A
Transistor Material:
Si
Maximum Drain Source Resistance:
225 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 3.1 A 20 V 6-Pin SOT-23 manufactured by DiodesZetex. The manufacturer part number is ZXMN2A01E6TA. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 3 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.7 w maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 1.3mm. Furthermore, the product is 1.75mm wide. Its accurate length is 3mm. Whereas its minimum gate threshold voltage includes 0.7v. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 3.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 225 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers single transistor configuration.

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MOSFET N-ch 3.1A 20V SOT23-6(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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