Diodes Inc ZXMD63N02XTA Dual N-channel MOSFET, 2.4 A, 20 V, 8-Pin MSOP

ZXMD63N02XTA Diodes Inc  Dual N-channel MOSFET, 2.4 A, 20 V, 8-Pin MSOP
ZXMD63N02XTA
DiodesZetex

Product Information

Maximum Continuous Drain Current:
2.4 A
Transistor Material:
Si
Width:
3.1mm
Transistor Configuration:
Isolated
Priced to Clear:
Yes
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
3V
Package Type:
MSOP
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6 nC @ 4.5 V
Channel Type:
N
Length:
3.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.25 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.95mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
130 mΩ
RoHs Compliant
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This is Diodes Inc Dual N-channel MOSFET 2.4 A 20 V 8-Pin MSOP manufactured by DiodesZetex. The manufacturer part number is ZXMD63N02XTA. While 2.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.1mm wide. The product offers isolated transistor configuration. Priced to Clear Options - yes. It has a maximum of 20 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of msop. It consists of 2 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 6 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3.1mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.25 w maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.95mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 130 mω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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