Diodes Inc DMNH4005SCT N-channel MOSFET, 150 A, 40 V DMN, 3-Pin TO220AB

DMNH4005SCT Diodes Inc  N-channel MOSFET, 150 A, 40 V DMN, 3-Pin TO220AB
DMNH4005SCT
DiodesZetex

Product Information

Maximum Continuous Drain Current:
150 A
Width:
9.01mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
3V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
48 nC @ 10 V
Channel Type:
N
Length:
10.66mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
165 W
Series:
DMN
Maximum Gate Source Voltage:
20 V
Height:
4.82mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
4 mΩ
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 150 A 40 V DMN 3-Pin TO220AB manufactured by DiodesZetex. The manufacturer part number is DMNH4005SCT. While 150 a of maximum continuous drain current. Furthermore, the product is 9.01mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 48 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.66mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 165 w maximum power dissipation. The product dmn, is a highly preferred choice for users. It features a maximum gate source voltage of 20 v. In addition, the height is 4.82mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 4 mω maximum drain source resistance.

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DMNH4005SCT, 40V +175°C N-Channel Enhancement Mode MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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