Category:
Power MOSFET
Dimensions:
2.9 x 1.6 x 0.9mm
Maximum Continuous Drain Current:
5 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
3V
Package Type:
TSOT-26
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
22.4 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1287 pF @ 25 V
Length:
2.9mm
Pin Count:
6
Typical Turn-Off Delay Time:
20.1 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.8 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.9mm
Typical Turn-On Delay Time:
6.6 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
60 mΩ
