Diodes Inc DMN32D2LFB4-7 N-channel MOSFET, 300 mA, 30 V, 3-Pin DFN

DMN32D2LFB4-7 Diodes Inc  N-channel MOSFET, 300 mA, 30 V, 3-Pin DFN
DiodesZetex

Product Information

Maximum Drain Source Voltage:
30 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
350 mW
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.2V
Height:
0.35mm
Width:
0.65mm
Length:
1.05mm
Maximum Drain Source Resistance:
2.2 Ω
Package Type:
DFN
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
300 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 300 mA 30 V 3-Pin DFN manufactured by DiodesZetex. The manufacturer part number is DMN32D2LFB4-7. It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 350 mw maximum power dissipation. It features a maximum gate source voltage of -10 v, +10 v. The product carries 1.2v of maximum gate threshold voltage. In addition, the height is 0.35mm. Furthermore, the product is 0.65mm wide. Its accurate length is 1.05mm. It provides up to 2.2 ω maximum drain source resistance. The package is a sort of dfn. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 300 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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DMN32D2LFB4-7 N-Channel Enhancement Mode MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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